Damage Response to Irradiation Temperature and Ion Fluence in C+-Irradiated 6H-SiC

May 12, 1999

Conference Paper

Damage Response to Irradiation Temperature and Ion Fluence in C+-Irradiated 6H-SiC

Abstract

There is no abstract currnetly available for this item

Revised: September 17, 2002 | Published: May 12, 1999

Citation

Jiang W., W.J. Weber, and S. Thevuthasan. 1999. Damage Response to Irradiation Temperature and Ion Fluence in C+-Irradiated 6H-SiC. In Microstructural Processes in Irradiated Materials; Materials Research Society Symposium Proceedings, edited by S.J. Zinkle, G. Lucas, R. Ewing, J. Williams, 540, 183-188. Warrendale, Pennsylvania:Materials Research Society. PNNL-SA-30628.