C60? sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Compared to traditional Cs+ sputtering depth profiling, the C60? sputtering provides over 200 times of effective signal intensity and the detection limit is about 10 times better. In addition, our X-ray photoelectron spectroscopy (XPS) results show that sputtering zinc oxide materials by 10 keV C60? leads to very weak carbon deposition at bottom of the sputter crater.
Revised: January 20, 2011 |
Published: May 11, 2010
Citation
Zhu Z., V. Shutthanandan, and P. Nachimuthu. 2010.Using C60? Sputtering to Improve Detection Limit of Nitrogen in Zinc Oxide.Surface and Interface Analysis 43, no. 1-2:661-663.PNNL-SA-68663.doi:10.1002/sia.3414