December 1, 1995
Journal Article

On the Use of Scanning Tunneling Microscopy to Investigate Surface Structure and Interface Formation in Transition Metal Oxides: SrTiO3 and TiO2

Abstract

Since transition metal oxides are wide bandgap, low conductivity materials compared to conventional semiconductors, surface analysis by scanning tunneling microscopy (STM) is expected to be problematic. This paper considers the factors that affect atomic scale imaging of transition metal oxides and demonstrates how STM can be exploited to examine the geometric and electronic structures of SrTiO3 and TiO2 surface, their variations with thermochemical history, and the mechanism of metal/oxides interface formation.

Revised: January 23, 2020 | Published: December 1, 1995

Citation

Bonnell D.A., Y. Liang, and D.L. Carroll. 1995. On the Use of Scanning Tunneling Microscopy to Investigate Surface Structure and Interface Formation in Transition Metal Oxides: SrTiO3 and TiO2. Interface Science 2, no. 4:365-377. PNNL-SA-24789. doi:10.1007/BF00222624