The paper presents the fabrication of transparent devices using nanofabrication and nanomaterials. Clear and functional structures can be constructed over a large area with highly transparent nanocrystals via layer-by-layer self-assembly. The 12 nm SnO2 and SiO2 nanocrystals can form ultra-thin and uniform multilayers, serving as the active and insulating layers, respectively. Transistors fabricated by this method have a high optical transparency and reliable electrical performance. The averaged optical transmittance is higher than 85%. The usage of nanofabrication and nanomaterials solves some of the current fabricating problems for transparent devices. This technique is applicable to other transistor devices and circuits.
Revised: June 8, 2007 |
Published: April 17, 2007
Citation
Zhang Q., L.V. Saraf, and F. Hua. 2007.Transparent thin-film transistor with self-assembled nanocrystals.Nanotechnology 18, no. 19:Art. No. 195204.PNNL-SA-55283.doi:10.1088/0957-4484/18/19/195204