Several thermal diffusivity disc samples of high purity CVD-SiC were neutron-irradiated to equivalent doses of about 5-8 dpa-SiC at temperatures from 252 up to 800 C. For this temperature range, the degradation in the thermal diffusivity ranged from about 95 percent down to 89 percent, respectively. The reciprocal thermal diffusivity method was used to estimate the phonon mean free paths and defect concentrations before and after the irradiations for these materials. Even though the CVD-SiC material is an excellent monitor of certain neutron irradiation effects, the degradation in the thermal diffusivity (conductivity) appears to be more than a factor of two greater than predicted by recent theoretical model simulations.
Revised: April 18, 2007 |
Published: March 31, 2003
Citation
Youngblood G.E., D.J. Senor, and R.H. Jones. 2003.THERMAL DIFFUSIVITY/CONDUCTIVITY OF IRRADIATED MONOLITHIC CVD-SIC. In Fusion Materials: Semi-Annual Progress Report Ending December 31, 2002, edited by Ron Klueh and Renetta Godfrey. 27-33. Washington Dc:DOE Office of Fusion Energy Sciences.PNNL-SA-38238.