A single crystal wafer of 6H-SiC was sequentially implanted in two different areas at 210 and 873 K, respectively, to the same fluence of 500 Ag2?/nm2. Rutherford backscattering spectrometry (RBS) has been used in a random orientation to profile the Ag implants and along the -axial channeling direction to determine the defect concentrations. Additional irradiation at 873 K with 5.4 MeV Si2? ions does not promote diffusion of the implants in either the crystalline or fully-amorphized SiC. There is no evidence of significant diffusion of the implanted Ag in crystalline SiC during thermal annealing at temperatures up to 1573 K. However, it appears that the Ag tends to diffuse toward the surface in amorphous SiC at 1573 K.
Revised: November 10, 2005 |
Published: June 1, 2004
Citation
Jiang W., W.J. Weber, V. Shutthanandan, L. Li, and S. Thevuthasan. 2004.Thermal and Dynamic Responses of Ag Implants in Silicon Carbide.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 219-220.PNNL-SA-39035.