Implantation of 13C2+ ions was employed to produce a concentration profile in 6H-SiC at 140 K. In-situ study of 13C implanted species was performed using the resonant reaction of 13C(p,gamma)14N at Ep=1.748 MeV. Significant 13C diffusion in the amorphized SiC does not occur up to 1130 K. The presence of Au implants (1.9 at.%) does not affect the 13C behavior. High-energy H+ irradiation also does not promote the 13C diffusion. The results suggest that C atoms are readily trapped locally in the SiC structure during disordering, which is important to understanding the amorphization processes in SiC.
Revised: January 10, 2007 |
Published: December 26, 2006
Citation
Jiang W., Y. Zhang, V. Shutthanandan, S. Thevuthasan, and W.J. Weber. 2006.Temperature response of 13C atoms in amorphized 6H-SiC.Applied Physics Letters 89, no. 26:art. no.:261902, (3 pages).PNNL-SA-52050.doi:10.1063/1.2422892