Irradiation effects on pre-amorphized Sr2Nd8(SiO4)6O2 have been investigated under 200 and 300 keV electron-beam irradiation at 130 and 480 K using in situ transmission electron microscopy. At 480 K, recrystallization occurred from the amorphous/crystalline interface under both 200 and 300 keV e-beam irradiation. At 130 K, the 200 keV e-beam irradiation induced recrystallization only; however, 300 keV e-beam irradiation induced both recrystallization and an electron hammering effect in the amorphous material that resulted in radial expansion perpendicular to the incident electron-beam direction and shrinkage parallel to the electron-beam direction. Ionization-induced processes and knock-on displacement damage are suggested to be the mechanisms for the recrystallization and the electron hammering effect, respectively.
Revised: August 19, 2008 |
Published: June 7, 2008
Citation
Bae I., Y. Zhang, W.J. Weber, M. Ishimaru, Y. Hirotsu, and M. Higuchi. 2008.Temperature dependence of electron-beam induced effects in amorphous apatite.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 266, no. 12-13:3037-3042.PNNL-SA-56946.doi:10.1016/j.nimb.2008.03.160