PNNL

Abstract

Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 micron thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 °C to 900°C in vacuum. The as-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), x-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 °C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 °C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution, the surface topography was relatively rough with varying size of the crystal grains after high temperature annealing.