PNNL

Abstract

We examine the crystal structure, electrical and optical properties of ZnO epitaxial films grown by pulsed laser deposition in a H2 or D2 ambient. We compared with pure ZnO films grown in O2 and vacuum. N-type electrical conductivity is enhanced by two to three orders of magnitude as a result of growing in H2 or D2. Temperature dependent Hall effect measurements reveal small (a few meV) carrier activation energies, along with carrier concentrations of 2-7 x 1018 cm-3, and mobilities of 20-40 cm2/Vs in ZnO films doped with H or D in the 1018 cm-3 range. We have modeled the low-temperature electrical properties of H- and D-doped ZnO films using variable range hopping and surface layer conductivity models, but our data do not fit well with these models. Rather, it appears that growth in H2 or D2 promotes the formation of an exceedingly shallow or conduction-band degenerate donor state, possibly associated with H or D substitution at O sites in the lattice.