Si:H alloys are being investigated for the high index material in an interference filter to provide spectral control in an application of thermophotovoltaic energy conversion. In particular, a multilayer edge filter is being developed to provide high transmission of photons with wavelengths between 1.0 and 2.0 um, and high reflectance for wavelengths outside this range. Thin films of Si:H were deposited by dc reactive sputtering. Deposition parameters were varied to optimize H content in Si: H coatings such that the refractive index is greater than 3, and optical absorption near 1 ?m and Si-H infrared absorptions near 5 and 12 ?m were minimized
Revised: November 10, 2005 |
Published: November 1, 2002
Citation
Martin P.M., L.C. Olsen, J.W. Johnston, and D.M. Depoy. 2002.Sputtered Si:H Alloys for Edge Filters: Application to Thermophotovoltaics.Applied Optics 41, no. 31:6702-6707.PNNL-SA-35631.