PNNL

Abstract

Well-aligned ripple structures on single crystal 3C-SiC surface were created and imaged in real time by focused ion beam (FIB) bombardment. Ex situ atomic force microscopy was applied to investigate topography. The ripple structure was formed by ion sputtering beyond a critical incidence angle (~50°), and its characteristic wavelength varied from 158 nm to 296 nm with the incidence angle and ion beam flux. Furthermore, the geometry, ordering and homogeneity of the self-assembled surface ripples can be well controlled by varying the ion beam incidence angle and beam current, as required for the formation of nanostructures used in SiC optical and electronic applications.