Studies damage accumulation and defect annealing (up to 1170 K) using in-situ 2.0 MeV He? Rutherford Backscattering Spectrometry combined with ion channeling methods. Observes that the defect concentration at the damage peak increases sigmoidally with increasing ion fluence during irradiation at low temperatures and that the isochronal recovery of the damage induced at low temperatures follows an exponential dependence on temperature.
Revised: November 10, 2005 |
Published: April 1, 1999
Citation
Jiang W., W.J. Weber, S. Thevuthasan, and D.E. McCready. 1999.Rutherford Backscattering Spectrometry Channeling Study of Ion-Irradiated 6H-SiC.Surface and Interface Analysis 27, no. 4:179-184.PNNL-SA-30266.