Thin films of alpha-Fe2O3(0001) (hermatite) and gamma-Fe2O3 (001) (maghemite) were epitaxially grown on Al2O3(0001) substrates, respectively, using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the crystalline quality of these films using Rutherford Backscattering (RBS) and channeling experiments. Minimum yields obtained from aligned and random spectra are 2.7+-0.3% for the alpha-Fe2o3(0001) film and 14.5+-0.6% for the gamma-Fe2O3 (001) film. Al and Mg outdiffusion into the hematite and maghemite films were observed at higher temperatures. Indiffusion of Fe atoms from the film into the substrate was observed for the gamma-Fe2o3(001)/MgO(001) system. In contrast, no Fe indiffusion was observed for the sapphire substrate.
Revised: September 17, 2002 |
Published: June 7, 1999
Citation
Thevuthasan S., D.E. McCready, W. Jiang, E.P. Mcdaniel, S.I. Yi, and S.A. Chambers. 1999.Rutherford Backscattering and Channeling Studies of Al and Mg Diffusion in Iron Oxide Thin Films. In Applications of Accelerators in Research and Industry: Proceedings of the Fifteenth International Conference, Denton, Texas, November 1998, edited by J.L. Duggan and I.L. Morgan, 475, 508-511. Woodbury, New York:American Institute of Physics.PNNL-SA-30456.