May 31, 2004
Journal Article

Room-Temperature Ferromagnetism in Ion-Implanted Co-Doped TiO2(110) Rutile

Abstract

Interest in diluted magnetic semiconductros (DMS) is growing rapidly within the emerging field of spintronics. For example, the ability to efficiently inject spin-polarized carriers into nonmagnetic semiconductor heterostructures creates new and exciting possibilities for utilizing DMS materials in spin-based devices. Several III-V and II-VI semiconductor materials doped with magnetic transition metal elements have been explored. Although these materials show promising behavior in some cases, most exhibit Curie temperatures of ~170 K or less. It has recently been shown that certain oxide semiconductors doped with magnetic transition elements show room-temperature ferromagnetism.

Revised: August 18, 2014 | Published: May 31, 2004

Citation

Shutthanandan V., S. Thevuthasan, S.M. Heald, T.C. Droubay, M.H. Engelhard, T.C. Kaspar, and D.E. McCready, et al. 2004. Room-Temperature Ferromagnetism in Ion-Implanted Co-Doped TiO2(110) Rutile. Applied Physics Letters 84, no. 22:4466-4468. PNNL-SA-43204.