November 1, 2006
Journal Article

Pressure Dependence of the Near-Band-Edge Photoluminescence from ZnO Microds at Low Temperature

Abstract

The temperature and pressure dependences of band-edge photoluminescence from ZnO mico-rods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of kBT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively.

Revised: December 6, 2006 | Published: November 1, 2006

Citation

Su F., W. Wang, K. Ding, G. Li, Y. Liu, A.G. Joly, and W. Chen. 2006. Pressure Dependence of the Near-Band-Edge Photoluminescence from ZnO Microds at Low Temperature. The Journal of Physics and Chemistry of Solids 67, no. 11:2376-2381. PNNL-SA-52143.