PNNL

Abstract

SiC is a candidate for nuclear applications at elevated temperatures but has not been fully studied under typical light-water reactor operating conditions, such as moderate temperatures and high pressures. Coupons of high-purity chemical vapor deposited SiC were exposed to deoxygenated, pressurized water at 573K and 100 Bar for up to 4000 hours. Ceramographic examination of the exposed SiC surfaces revealed both embryonic and large, d > 300 µm, pits on the surface. The pits were characterized using scanning electron microscopy for structure and chemistry analysis. Pit densities were also determined by standard counting methods. The chemical analysis revealed that the pits are associated with the formation of silica and subsequent loss of Si, which is expected due to several suggested reactions between SiC and water.