August 21, 2007
Conference Paper

Pb Quantification of CdZnTe microheterogeneities complimented by SEM, IR microscopy, EDX, and TOF-SIMS

Abstract

High-resistivity crystals of CdZnTe are made using low-pressure Bridgman. The success of any doping scheme depends on its effectiveness in overcoming trace contamination and variations in processing. Multiple imaging and quantitative techniques gave highly complimentary information relating to spatial heterogeneity of the CZT. Secondary Ion Mass Spectroscopy (SIMS) has good sensitivity and can quantitate trace elements in areas less than 150 ?m in diameter. PNNL has SIMS standards for several key elements and can extrapolate for other elements. A heavily Pb-doped sample (0.1 atom %) was characterized to determine the distribution of lead and its potential impact on precipitates.

Revised: October 31, 2007 | Published: August 21, 2007

Citation

Bliss M., D.C. Gerlach, J.B. Cliff, M.B. Toloczko, D.S. Barnett, G. Ciampi, and K.A. Jones, et al. 2007. "Pb Quantification of CdZnTe microheterogeneities complimented by SEM, IR microscopy, EDX, and TOF-SIMS." In Proceedings of the 11th Symposium on Radiation Measurements and Applications, published in Nuclear Instruments and Methods in Physics Research, Part A, 579, 138-140. Amsterdam:Elsevier. PNNL-SA-50517. doi:10.1016/j.nima.2007.04.018