We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.
Revised: September 5, 2008 |
Published: May 12, 2008
Citation
Berry J.J., D.S. Ginley, and P.E. Burrows. 2008.Organic Light Emitting Diodes Using a Ga:ZnO Anode.Applied Physics Letters 92, no. 19:193304.PNNL-SA-57249.doi:10.1063/1.2917565