PNNL

Abstract

One of the critical materials needs for the development of spin electronics is diluted magnetic semiconductors (DMS) which retain their ferromagnetism at and above room temperature.¹ Spin polarization in DMS materials leads to the possibility of spin-polarized current injection into nonmagnetic semiconductor heterostructures. Such transport is of critical importance in the development of devices that utilize spin (e.g. spin-LEDs and spin-FETs). New magnetically-doped semiconducting oxides that show promise because of Curie points which exceed room temperature are currently being investigated in our lab and elsewhere. However, the detailed materials properties and mechanism(s) of magnetism in these systems have been elusive. In this talk, I will present recent results from our laboratory focused on the MBE synthesis and properties of these ferromagnetic oxide semiconductors. This work was funded by the PNNL Nanoscience and Technology Initiative, the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering Physics, and the DARPA Spins in Semiconductors (SPINS) Initiative.