We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(001) substrates. Phase-pure epitaxial films in which N substitutes for O with no secondary phases formation occur only over a narrow range of fluxes. The N solubility is limited to ~0.2 at. % of the anions and is an order of magnitude lower than that found in N-doped rutile. N substitution for O results in N 2p derived states off the top of the anatase valence band and the associated red shift in the optical bandgap.
Revised: January 23, 2008 |
Published: January 1, 2008
Citation
Cheung S.H., P. Nachimuthu, M.H. Engelhard, C.M. Wang, and S.A. Chambers. 2008.N incorporation, composition and electronic structure in N-doped TiO2(001) anatase epitaxial films grown on LaAlO3(001).Surface Science 602, no. 1:133-141.PNNL-SA-56452.doi:10.1016/j.susc.2007.09.061