February 8, 2007
Journal Article

N incorporation and electronic structure in N-doped TiO2(110) rutile

Abstract

Epitaxial TiO2-xNx film growth under anion-rich conditions is characterized by nearly balanced incorporation rates for substitutional N (NO) and interstitial Ti (Tii). Tii donors fully compensate and stabilize N3-, but preclude the formation of p-type material. Hybridization occurs between Tii(IV) and NO3-, but the value of x is limited to ~0.02 under these conditions. Tii(IV)-NO3- states occur above the valence band maximum of pure TiO2, riving rise to enhanced optical absorption in the visible up to ~2.5 eV. Much higher NO and Tii concentrations result from using cation-rich conditions.

Revised: January 2, 2008 | Published: February 8, 2007

Citation

Cheung S.H., P. Nachimuthu, A.G. Joly, M.H. Engelhard, M.K. Bowman, and S.A. Chambers. 2007. N incorporation and electronic structure in N-doped TiO2(110) rutile. Surface Science 601, no. 7:1754-1762. PNNL-SA-50468. doi:10.1016/j.susc.2007.01.051