Molecular beam epitaxy coupled with the use of activated oxygen is shown to be a powerful tool for the growth of well-defined, structurally-excellent oxide semiconductor films. The basics of the methodology are discussed. Several case studies are presented to illustrate some of the physical phenomena that can be investigated. These include Cr- and Co-doped TiO2 anatase, Ti-doped ?-Fe2O3 hematite, and N-doped TiO2 rutile.
Revised: July 21, 2008 |
Published: July 2, 2008
Citation
Chambers S.A. 2008.Molecular beam epitaxial growth of doped oxide semiconductors.Journal of Physics: Condensed Matter 20, no. 26:Art. No. 264004.PNNL-SA-56868.