September 4, 2001
Journal Article

Migration of O-vacancies in quartz: The effect of excitons and electron holes

Abstract

We have calculated migration pathways and estimated the activation energy for the diffusion of oxygen vacancies in quartz using density functional theory. While the energy barrier for the diffusion of a neutral vacancy is very high, 4.1 eV, the binding of a triplet state exciton to the vacancy lowers the barrier to 1.7 eV and the attachment of a hole lowers the barrier to 1.9 eV, making the vacancy mobile at commonly used annealing temperatures.

Revised: February 22, 2007 | Published: September 4, 2001

Citation

Song J., L.R. Corrales, G. Kresse, and H. Jonsson. 2001. Migration of O-vacancies in quartz: The effect of excitons and electron holes. Physical Review. B, Condensed Matter 64, no. 134102:1-5. PNNL-SA-32493.