We have used the relatively uninvestigated Zn(TMHD)2 precursor to grow highly c-axis oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicate that surface carbon was reduced from 21 at. % to much less than 1 at. % within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis reveal columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atom percent ratio indicative of stoichometric ZnO.
Revised: March 22, 2011 |
Published: May 1, 2007
Citation
Saraf L.V., M.H. Engelhard, C.M. Wang, A.S. Lea, D.E. McCready, V. Shutthanandan, and D.R. Baer, et al. 2007.Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor.Journal of Materials Research 22, no. 5:1230-1234.PNNL-SA-52809.doi:10.1557/JMR.2007.0146