We report the growth of c-axis oriented ZnO films on silicon (100) single crystal substrates by MOCVD. A relatively uninvestigated precursor, Zn(TMHD)2, was used in a cold-wall MOCVD reactor. XPS and RBS analysis yielded a zinc-to-oxygen atom percent ratio of 0.98 and 1.00 at the surface and in the overall film, respectively indicative of stoichometric ZnO. Due to the presence of carbon at the surface, the excess oxygen at the surface was in the form of C-O bonding. The c-axis orientation was confirmed by HRTEM and XRD. We look at these results from a viewpoint of an ongoing effort to ensure cleaner decompositions using Zn(TMHD)2.
Revised: June 8, 2007 |
Published: May 1, 2007
Citation
Saraf L.V., M.H. Engelhard, C.M. Wang, A.S. Lea, D.E. McCready, V. Shutthanandan, and D.R. Baer, et al. 2007.Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6 tetramethyl-3,5-heptanedionato)zinc precursor.Journal of Materials Research 22, no. 5:1230-1234.PNNL-SA-51436.doi:10.1557/JMR.2007.0146