October 19, 2005
Journal Article

Low-temperature activation and deactivation of high-Curie-temperature ferromagnetism in a new diluted magnetic semiconductor: Ni2+-Doped SnO2

Abstract

We report the synthesis of colloidal Ni2+-doped SnO2 (Ni2+:SnO2) nanocrystals and their characterization by electronic absorption, magnetic circular dichroism, X-ray absorption, magnetic susceptibility, scanning electron microscopy, and X-ray diffraction measurements. The Ni2+ dopants are found to occupy pseudo-octahedral Sn4+ cation sites of rutile SnO2 without local charge compensation. The paramagnetic nanocrystals exhibit robust high-TC ferromagnetism (Ms (300 K) = 0.8 µB/Ni2+) when spin-coated into films, attributed to the formation of interfacial fusion defects. Facile reversibility of the paramagnetic-to-ferromagnetic phase transition is also observed. This magnetic phase transition is studied as a function of temperature, time, and atmospheric composition, from which the barrier to ferromagnetic activation is estimated to be Ea = 1200 cm-1. This energy is associated with ligand mobility on the surfaces of the Ni2+:SnO2 nanocrystals. The phase transition is reversed under air but not under N2, from which the microscopic identity of the activating defect is proposed to be interfacial oxygen vacancies.

Revised: September 4, 2007 | Published: October 19, 2005

Citation

Archer P.I., P. Radovanovic, S.M. Heald, and D.R. Gamelin. 2005. Low-temperature activation and deactivation of high-Curie-temperature ferromagnetism in a new diluted magnetic semiconductor: Ni2+-Doped SnO2. Journal of the American Chemical Society 127, no. 41:14479-14487. PNNL-SA-46318.