Electron-beam induced effects in pre-amorphized Sr2Nd8(SiO4)6O2 is investigated in situ using transmission electron microscopy with 200 keV electrons at temperatures ranging from 380 to 780 K. While epitaxial recrystallization is observed from amorphous/crystalline toward surface within the electron irradiated area with its rate increasing as temperature increases from 380 to 580 K, structural contrast features (i.e., O deficient amorphous materials) as well as recrystallization are observed even outside of the irradiation area at temperatures from 680 to 780 K. Ionization-induced processes and local non-stoichiometry induced by oxygen migration and desorption are possible mechanisms for the electron-beam induced recrystallization and for the formation of the structural contrast features, respectively.
Revised: April 25, 2008 |
Published: April 1, 2008
Citation
Bae I., Y. Zhang, W.J. Weber, M. Ishimaru, Y. Hirotsu, and M. Higuchi. 2008.Ionization-induced effects in amorphous apatite at elevated temperatures.Journal of Materials Research 23, no. 4:962-967.PNNL-SA-58435.doi:10.1557/JMR.2008.0114