Helium ion channeling has been used in a detailed study of 3C-SiC films on a Si/SiO2/Si (SIMOX) substrate. The strain-induced angular shift was determined to be 0.16? ? 0.05?, indicating a kink between the SiC and Si layers along the axis. Single crystals of 6H-SiC have been irradiated with a variety of ions over a range of fluences. The relative disorder on Si sublattice shows a sigmoidal dependence on dose for all ions. In isochronal and isothermal annealing studies, two distinct recovery stages are identified with activation energies of 0.25 ? 0.1 eV and 1.5 ? 0.3 eV, respectively. Deuterium ion channeling is also applied to simultaneously study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated at 100 and 300 K.
Revised: September 24, 2002 |
Published: July 10, 2000
Citation
Jiang W., and W.J. Weber. 2000.Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide. In International Conference on Silicon Carbide and Related Materials, ICSRM'99, 10-15 Oct. 1999, Research Triangle Park, NC, USA. Materials Science Forum ; 2000, edited by C.H. Carter, Jr., R.P. Devaty, and G.S. Rohrer, 338-342, pt. 2, 957-960. Uetikon-Zuerich, :Trans Tech Publications.PNNL-SA-32265.