PNNL

Abstract

Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etch nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of a heavily n-doped (R = 0.05-0.5 O -cm) silicon at a current density of 10 mA/cm² in buffer oxide etch (BOE) electrolyte solution defect craters, containing textured nanopores, were observed to occur in ring shaped patterns of rings. The defect craters apparently originate at the hydrogen-BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current carrying Si-OH species are most likely responsible for the widening in the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the low density of nanopores formed at ring edges are isolated from each other. Overall features observed in photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) intensity strongly emphasize the role of surface oxide that influences these properties.