June 10, 1993
Journal Article

High-resolution photoelectron spectroscopy study of (root 3 x root 3)R30°-Ag on Si(111)

Abstract

Presents the study of root 3 surface with high-resolution core-level photoemission in an attempt to resolve the controversy as to whether two structurally different root 3 phases are formed depending on the deposition temperature. Expands previous work on subject by Kono et al. by expanding higher energy resolution and temperature dependent information.

Revised: August 20, 2019 | Published: June 10, 1993

Citation

Herman G.S., J.C. Woicik, J.C. Woicik, A.B. Andrews, A.B. Andrews, J.L. Erskine, and J.L. Erskine. 1993. High-resolution photoelectron spectroscopy study of (root 3 x root 3)R30°-Ag on Si(111). Surface Science Letters 290, no. 1-2:L643-L648. BN-SA-3763. doi:10.1016/0167-2584(93)90897-R