Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si (111) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 ?C for 30 minutes. Cobalt depth profiles and contaminations were determined using Rutherford backscattering spectrometry (RBS) and time-of-flight energy elastic recoil detection analysis (ToF-E ERDA). The polycrystalline cobalt silicide phases formed were characterized by grazing-incidence x-ray diffraction (GIXRD). The surface topography development and interfaces have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 ?C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
Revised: April 27, 2006 |
Published: January 1, 2006
Citation
Zhang Y., D.E. McCready, C.M. Wang, J.S. Young, M.I. Mckinley, H.J. Whitlow, and A. Razpet, et al. 2006.Formation of Cobalt Silicide Films by Ion Beam Deposition.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 242, no. 1-2:602-604.PNNL-SA-42484.