This chapter reviews the experimental results, obtained by the authors, on the disorder accumulation, disorder recovery, and behavior of implants in ion-irradiated 6H silicon carbide (6H-SiC) single crystals. The disorder on both the Si and C sublattices has been studied using a combination of Rutherford backscattering spectrometry and nuclear reaction analysis in channeling geometry. Damage states have been analyzed based on multiaxial channeling along different orientations. The surface morphologies and damage states have been examined using electron microscopy. Damage accumulation has been investigated as a function of ion fluence, irradiation temperature, ion species, and dose rate. The results of both isochronal and isothermal annealing, as well as dynamic recovery induced by energetic ion beams are summarized. In addition, the behavior of noble-metal implants and gas species in SiC are discussed.
Revised: May 2, 2007 |
Published: November 17, 2003
Citation
Jiang W., and W.J. Weber. 2003.Experimental Studies of Defects, Implants, and Their Processes in Ion-Irradiated Silicon Carbide Single Crystals. In Recent Research Developments in Applied Physics, edited by S.G. Pandalai. 451-495. Trivandrum:Transworld Research Network.PNNL-SA-38605.