May 1, 1999
Journal Article

Epitaxial Growth and Characterization of Ce1-xZrxO2 Thin Films

Abstract

Epitaxial films have been grown on SrTiO3(001) by oxygen-plasma-assisted molecular beam epitaxy. The film growth at 600 degrees C is predominantly nucleation and growth of 3-D islands. The films become much smoother after rapid thermal annealing at 700 degrees C for 30 seconds in the oxygen plasma. High-energy ion channeling reavelas that Zr atoms substitutionally incorporate at cation sites in the CeO2 lattice for all doping levels, leading to Ce1-xZrxO2 solid solutions. Analysis of Zr 3d and Ce 3d core-level binding energies shows that the oxidation state of both Zr and Ce is +4. Lattice distortion induced by incorporation of Zr in the CeO2 lattice beomes prevalent for high doping levels, and surfaces roughen accordingly.

Revised: November 11, 1999 | Published: May 1, 1999

Citation

Gao Y., G.S. Herman, S. Thevuthasan, C.H. Peden, and S.A. Chambers. 1999. "Epitaxial Growth and Characterization of Ce1-xZrxO2 Thin Films." Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films 17, no. 3:961-969. PNNL-SA-30616.