December 17, 2003
Journal Article

Electronic Structure of 1 to 2 nm Diameter Silicon Core/Shell Nanocrystals: Surface Chemistry, Optical Spectra, Charge Transfer, and Doping

Abstract

Static and time-dependent density functional calculations, geometrically optimized and including all electrons, are described for silicon nanocrystals as large as Si87H76, which contains 163 atoms. We explore and predict the effect that different sp³ passivation schemessF or H termination, thin oxide shell, or alkane terminationshave on the HOMO and LUMO, on the optical spectra, and on electron transfer properties. Electronegativity comparisons are a useful guide in understanding the observed deviation from the simple quantum size effect model. Nanocrystals containing Al or P impurity atoms, either on the surface or in the interior, are explored to understand electrical doping in strongly quantum-confined nanocrystals. Surface dangling bonds are found to participate in internal charge transfer with P atom dopant electrons.

Revised: December 8, 2005 | Published: December 17, 2003

Citation

Zhou Z., R.A. Friesner, and L. Brus. 2003. Electronic Structure of 1 to 2 nm Diameter Silicon Core/Shell Nanocrystals: Surface Chemistry, Optical Spectra, Charge Transfer, and Doping. Journal of the American Chemical Society 125, no. 50:15599-15607.