Porous ceramic and porous hybrid ceramic films are potentially useful as low dielectric constant interlayers in semiconductor interconnects (1-6). The hybrid ceramic films are generally defined as films that contain both organic and ceramic molecular components in the structure, as for example, organosilicate films. At present, the industry is in the process of inserting CVD and spin-coated films in the k = 2.6-3.0 range. Exploratory films with k = 2.2-2.5 are being evaluated within interconnects (7) for the next generation of devices. The silicate/organosilicate dielectric films with k 2.2 generally exhibit an elastic modulus 4.0 GPa. For future technology nodes (
Revised: March 2, 2004 |
Published: May 15, 2003
Citation
Li X.S., J.C. Birnbaum, R.E. Williford, G.E. Fryxell, C.A. Coyle, G.C. Dunham, and S. Baskaran. 2003.Effect of Humidity Treatments on Porosity and Mechanical Integrity of Mesoporous Silica Films.Chemical Communications. PNWD-SA-5824.