A surface amorphized layer and a buried disordered structure were created in gallium nitride (GaN) irradiated using 1.0 MeV Au+ ions to fluences of 25 and 70 Au+/nm2 at room temperature. Bubbles of N2 gas within both the amorphized and disordered GaN are formed. A gradient profile with a lower N concentration in the amorphized region is observed, which provides direct evidence of N loss by diffusion in the Au+ irradiated GaN. These results are important to understanding the amorphization processes in GaN and may have significant implications for the design and fabrication of GaN-based devices.
Revised: April 7, 2011 |
Published: July 10, 2006
Citation
Jiang W., Y. Zhang, W.J. Weber, J. Lian, and R.C. Ewing. 2006.Direct evidence of N aggregation and diffusion in Au+ irradiated GaN.Applied Physics Letters 89, no. 2:021903-1-3.PNNL-SA-48878.