Defects created in Al0.4Ga0.6N crystals by 320 keV Ar ion irradiation were studied by using RBS/C and TEM techniques. One of the main aims of the work was to use a new version of McChasy, a Monte – Carlo simulation code of backscattering spectra, for the analysis of experimental results obtained for a dislocations-containing crystal. Transmission Electron Microscopy technique was used to get a better insight into dislocation and dislocation loop geometries in order to restrict the range of parameters used in simulations. RBS/C analysis was performed in a 1.5 MeV – 3 MeV energy range in order to check if MC simulations correctly reproduce backscattering spectra at different energies.
Revised: October 7, 2011 |
Published: June 1, 2010
Citation
Jagielski J., L. Thome, Y. Zhang, C.M. Wang, A. Turos, L. Nowicki, and K. Pagowska, et al. 2010.Defect studies in ion irradiated AlGaN.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 268, no. 11-12:2056-2059.PNNL-SA-68810.doi:10.1016/j.nimb.2010.02.055