Single crystal wafers of -oriented 6H-SiC were irradiated at different temperatures using a variety of ion species. The disorder on both the Si and C sublattices has been studied in situ using a combination of ion beam analyses in multiaxial channeling geometry. The fraction of the irradiation-induced defects surviving simultaneous recovery processes decreases with decreasing ion mass and with increasing irradiation temperature. Some of the Si and C defects are well aligned with the axis and the rate of C disordering is higher than that of Si disordering. Three recovery stages in Au2?-irradiated 6H-SiC have been identified.
Revised: May 20, 2004 |
Published: May 14, 2002
Citation
Jiang W., W.J. Weber, and C.M. Wang. 2002.Defect Accumulation and Recovery in Ion-Implanted 6H-SiC. In Defect and Impurity Engineered Semiconductors and Devices III, Materials Research Society Symposium Proceedings, edited by S Ashok, J Chevallier, N Johnson,B Sopori,H Okushi, 719, 1-6. Warrendale, Pennsylvania:Materials Research Society.PNNL-SA-36093.