Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis

May 15, 2002

Journal Article

Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis

Abstract

Damage evolution in 4H-SiC epitaxial layers irradiated with 1.1 MeV Al2 molecular ions at 150 K to ion fluences from 0.15 to 2.25 Al/nm2 and subsequent damage recovery following isochronal annealing at temperatures up to 870 K were studied by Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA). Using a 0.94 MeV D? beam in channeling geometry, disorder on both the Si and C sublattices was characterized simultaneously by measuring scattering/reaction yields from RBS combined with 12C(d,p)13C NRA analysis. The relative disorder on the as-implanted sublattices follows a sigmoidal dependence on ion fluence and the relative disorder on the C sublattice is higher than that on the Si sublattice at low ion fluences. Isochronal recovery on both the Si and C sublattices exhibits similar nonlinear dependence on annealing temperature, with several step-like recovery regimes that are associated with different recovery processes.

Revised: May 20, 2004 | Published: May 15, 2002

Citation

Zhang Y., W.J. Weber, W. Jiang, A. Hallen, and G. Possnert. 2002. Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis. Journal of Applied Physics 91, no. 10:6388-6395. PNNL-SA-34878.