June 15, 2006
Journal Article

Computer Simulation of Defects and Oxygen Transport in Yttria-Stabilized Zirconia

Abstract

We have used molecular dynamics simulations and energy minimization calculations to examine defect energetics and oxygen diffusion in yttria-stabilized zirconia (YSZ). Oxygen vacancies prefer to be second nearest neighbors to yttrium dopants. The oxygen diffusion coefficient shows a peak at 8 mole % yttria consistent with experimental findings. The activation energy for oxygen diffusion varies from 0.6 to 1.0 eV depending on the yttria content. The Y-Vo-Y complex with a binding energy of -0.85 eV may play an important role in any conductivity degradation of YSZ.

Revised: September 5, 2006 | Published: June 15, 2006

Citation

Devanathan R., W.J. Weber, S.C. Singhal, and J.D. Gale. 2006. Computer Simulation of Defects and Oxygen Transport in Yttria-Stabilized Zirconia. Solid State Ionics 177, no. 15-16:1251-1258. PNNL-SA-49558. doi:10.1016/j.ssi.2006.06.030