July 15, 2006
Journal Article

Characterization of Exciton Self-trapping in Amorphous Silica

Abstract

Triplet electron-hole excitations were introduced into amorphous silica to study self-trapping (localization) and damage formation using density functional theory. Multiple self-trapped exciton (STE) states are found that can be differentiated based on the luminescence energy, the localization and distribution of the excess spin density of the triplet state, and relevant structural data, including the presence or absence of broken bonds. The trapping is shown to be affected by the relaxation response of the silica network, and by comparing results of quartz and amorphous silica systems the effects of the inherent disordered structures on exciton self-trapping are revealed. A key result is that during the process of the exciton trapping, point defects are formed as a result of a non-activated damage mechanism where the triplet energy surface and the corresponding ground state singlet surface come into close proximity. This work was supported by the Office of Basic Energy Sciences of the Department of Energy, in part by the Chemical Sciences program and in part by the Engineering and Geosciences Division. The Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy under contract DE-AC05-76RL01830.

Revised: April 20, 2011 | Published: July 15, 2006

Citation

Van Ginhoven R.M., H. Jonsson, and L.R. Corrales. 2006. Characterization of Exciton Self-trapping in Amorphous Silica. Journal of Non-crystalline Solids 352, no. 23-25:2589-2595. PNNL-SA-47858. doi:10.1016/j.jnoncrysol.2006.01.095