PNNL

Abstract

Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al22? and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions.