Single crystal -oriented 6H-SiC was irradiated with Au2+ ions to fluences of 0.032, 0.058 and 0.105 ions/nm2 at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in-situ D+ ion channeling along the and axes. A higher level of disorder on both the Si and C sublattices is observed along the . There is a preferential C disordering and more C interstitials are aligned with . Room-temperature recovery along occurs, which is associated with the -aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with . Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au2+-irradiated 6H-SiC and 4H-SiC are observed.
Revised: July 29, 2009 |
Published: April 20, 2009
Citation
Jiang W., and W.J. Weber. 2009.Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K.Journal of Nuclear Materials 389, no. 2:332-335.PNNL-SA-60210.doi:10.1016/j.jnucmat.2009.02.023