PNNL

Abstract

We reexamine a well-established method for determining valence band maxima in semiconductors based on fitting photoemission spectra to theoretical densities of states. This technique is inaccurate for certain oxides because electronic structure methods predict too sharp a leading edge rise, which in turn appears to stem from an underestimation of the extent of metal-oxygen hybridization at the top of the valence band. In contrast, extrapolating the x-ray excited leading edge to the energy axis, in combination with the energy at which the UV-excited leading edge intensity goes to zero, yields consistent and reliable results that are useful for accurate band offset determinations.