Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.
Revised: February 25, 2016 |
Published: November 25, 2015
Citation
Wang Y., R.B. Comes, S.A. Wolf, and J. Lu. 2015.Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices.IEEE Journal of the Electron Devices Society 4, no. 1:11-14.PNNL-SA-110212.doi:10.1109/JEDS.2015.2503922