Tungsten (W) has been proposed as a plasma-facing material (PFM) in fusion reactors due to its outstanding properties. Degradation of the material properties is expected to occur as a result of hydrogen (H) isotope permeation and trapping in W. In this study, two polycrystalline W plates were implanted with 80 keV H2+ ions to a fluence of 2E21 H+/m2 at room temperature (RT). Time-of-flight secondary ion mass spectrometry (ToF-SIMS), focused ion beam (FIB) and scanning electron microscopy (SEM) were used for sample characterization. The SIMS data shows that H atoms are distributed well beyond the ion projected range. Isochronal annealing appears to suggest two H release stages that might be associated with the reported activation energies. H release at RT was observed between days 10 and 70 following ion implantation, and the level was maintained over the next 60 days. In addition, FIB/SEM results exhibit H2 blister formation near the surface of the as-implanted W. The blister distribution remains unchanged after thermal annealing up to 600 °C.
Revised: July 25, 2020 |
Published: January 25, 2018
Citation
Zhang J., W. Jiang, Z. Zhu, L. Shao, L. Price, J. Zhao, and T. Wang. 2018.Thermal Annealing Behavior of Hydrogen and Surface Topography of H2+ Ion Implanted Tungsten.Journal of Nuclear Science and Technology 55, no. 7:703-708.PNNL-SA-131482.doi:10.1080/00223131.2018.1428126