Preparation of clean and smooth surfaces of InAs(100) by hydrogen molecular cleaning (HMC) along with in-situ studies of the nanoscale oxidation of pristine surfaces is studied. Removal of native oxides has been verified in-depth by in-situ nuclear reaction analysis(NRA) using the 16O(d,p)17O reaction and XPS. Further, ion channeling studies have been performed to verify atomically smooth surfaces after post-cleaning. Stability and kinetic boundaries of the cleaned InAs(100) surfaces against oxidation have also been experimentally derived and studied by NRA. These results are important not only to prepare clean surfaces of InAs, but also to understand fundamentals of oxide/III-V semiconductor interfaces.
Revised: April 7, 2011 |
Published: May 14, 2007
Citation
Chang C., V. Shutthanandan, S.C. Singhal, and S. Ramanathan. 2007.In-situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs.Applied Physics Letters 90, no. 20.PNNL-SA-54951.doi:10.1063/1.2740200