This report describes the progress of our current experimental effort on Mg+ ion implanted 3C-SiC. Following our initial study [ ] that suggests possible formation of Mg2Si and MgC2 precipitates as well as tetrahedral voids in 24Mg+ ion implanted 3C-SiC, we have designed specific experiments to confirm the results and examine the inclusions and defects. Relatively low fluence (5.0×1015 24Mg+/cm2) implantation in 3C-SiC was performed to reduce defect concentrations and isolate individual defect features for characterization. In addition, 25Mg+ isotope was implanted in 3C-SiC to the same previously applied ion fluence (9.6×1016 ions/cm2) for atom probe tomography (APT) study of precipitates. Each set of the samples was annealed at 1573 K for 2, 6 and 12 h, respectively. The depth profiles of the implanted Mg were measured using secondary ion mass spectrometry (SIMS) before and after the annealing steps. The samples are currently being analyzed using transmission electron microscopy (TEM) and APT.
Revised: July 25, 2020 |
Published: September 1, 2015
Citation
Jiang W., J. Zhang, Z. Zhu, T.J. Roosendaal, S.Y. Hu, C.H. Henager, and R.J. Kurtz, et al. 2015.PROGRESS IN CHARACTERIZATION OF PRECIPITATES AND DEFECT STRUCTURES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE. In Fusion Semiannual Progress Report for the Period Ending June 30, 2015, edited by G Nardella. 119-122. DOE/ER-0313/58. Oak Ridge, Tennessee:Oak Ridge National Laboratory.PNNL-SA-112370.