We have measured the valence band discontinuity at artificially structured, epitaxial heterojunctions of alpha-Cr2O3(0001) and alpha-Fe2O3(0001). Layered film structures of these two materials maintain the in-plane lattice parameter of alpha-FeO3(0001). Thus, the alpha-Cr2O3(0001) layers are under a 2.3% tensile stress. The valence band offsets are 0.3+-0.1 eV and 0.7+-0.1 eV when the top layer is Fe2O3 and Cr2O3, repectively. The noncommumtativity in band offset appears to be due to a growth-sequence-dependent interface dipole.
Revised: March 20, 2001 |
Published: May 15, 2000
Citation
Chambers S.A., Y. Liang, and Y. Gao. 2000.Noncommutative Band Offset At Alpha-Cr2O3/Alpha-Fe2O3 (0001) Heterojunctions.Physical Review. B, Condensed Matter 61, no. 19:13223-13229.PNNL-SA-31283.